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| bzx55c silicon planar zener diodes the zener voltages are graded according to the international e24 standard. other tolerances and higher zener voltages are upon request. absolute maximum ratings (t a = 25 ) parameter symbol value unit power dissipation p tot 500 1) mw junction temperature t j 175 storage temperature range t stg - 55 to + 175 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. characteristics at t a = 25 parameter symbol max. unit thermal resistance junction to ambient air r tha 0.3 1) k/mw forward voltage at if = 100 ma v f 1 v 1) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case. max. 2.9 max. 1.9 glass case do-34 max. 0.45 min. 27.5 min. 27.5 xxx cathode band part no. dimensions in mm black black max. 3.9 max. 1.9 glass case do-35 max. 0.5 min. 27.5 min. 27.5 xxx cathode band part no. st "st" brand dimensions in mm black black black 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech
type zener voltage range 1) dynamic resistance reverse leakage current temp. coefficient of zener voltage v znom v zt at i zt z zt z zk at i zk t a =25 t a =125 i r at v r (v) (v) (ma) max. ( ? )max. ( ? ) (ma) max. (a) max. (a) (v) tkvz (%/k) bzx55c0v8 2) 0.8 0.73...0.83 5 8 50 1 - - - -0.26...-0.23 bzx55c2v0 2 1.8...2.15 5 85 600 1 100 200 1 -0.09...-0.06 bzx55c2v2 2.2 2.08...2.33 5 85 600 1 75 160 1 -0.09...-0.06 bzx55c2v4 2.4 2.28...2.56 5 85 600 1 50 100 1 -0.09...-0.06 bzx55c2v7 2.7 2.5...2.9 5 85 600 1 10 50 1 -0.09...-0.06 bzx55c3v0 3 2.8...3.2 5 85 600 1 4 40 1 -0.08...-0.05 bzx55c3v3 3.3 3.1...3.5 5 85 600 1 2 40 1 -0.08...-0.05 bzx55c3v6 3.6 3.4...3.8 5 85 600 1 2 40 1 -0.08...-0.05 bzx55c3v9 3.9 3.7...4.1 5 85 600 1 2 40 1 -0.08...-0.05 bzx55c4v3 4.3 4...4.6 5 75 600 1 1 20 1 -0.06...-0.03 bzx55c4v7 4.7 4.4...5 5 60 600 1 0.5 10 1 -0.05...+0.02 bzx55c5v1 5.1 4.8...5.4 5 35 550 1 0.1 2 1 -0.02...+0.02 bzx55c5v6 5.6 5.2...6 5 25 450 1 0.1 2 1 -0.05...+0.05 bzx55c6v2 6.2 5.8...6.6 5 10 200 1 0.1 2 2 0.03...0.06 bzx55c6v8 6.8 6.4...7.2 5 8 150 1 0.1 2 3 0.03...0.07 bzx55c7v5 7.5 7...7.9 5 7 50 1 0.1 2 5 0.03...0.07 bzx55c8v2 8.2 7.7...8.7 5 7 50 1 0.1 2 6.2 0.03...0.08 bzx55c9v1 9.1 8.5...9.6 5 10 50 1 0.1 2 6.8 0.03...0.09 bzx55c10 10 9.4...10.6 5 15 70 1 0.1 2 7.5 0.03...0.1 bzx55c11 11 10.4...11.6 5 20 70 1 0.1 2 8.2 0.03...0.11 bzx55c12 12 11.4...12.7 5 20 90 1 0.1 2 9.1 0.03...0.11 bzx55c13 13 12.4...14.1 5 26 110 1 0.1 2 10 0.03...0.11 bzx55c15 15 13.8...15.6 5 30 110 1 0.1 2 11 0.03...0.11 bzx55c16 16 15.3...17.1 5 40 170 1 0.1 2 12 0.03...0.11 bzx55c18 18 16.8...19.1 5 50 170 1 0.1 2 13 0.03...0.11 bzx55c20 20 18.8...21.2 5 55 220 1 0.1 2 15 0.03...0.11 bzx55c22 22 20.8...23.3 5 55 220 1 0.1 2 16 0.04...0.12 bzx55c24 24 22.8...25.6 5 80 220 1 0.1 2 18 0.04...0.12 bzx55c27 27 25.1...28.9 5 80 220 1 0.1 2 20 0.04...0.12 bzx55c30 30 28...32 5 80 220 1 0.1 2 22 0.04...0.12 bzx55c33 33 31...35 5 80 220 1 0.1 2 24 0.04...0.12 bzx55c36 36 34...38 5 80 220 1 0.1 2 27 0.04...0.12 bzx55c39 39 37...41 2.5 90 500 0.5 0.1 5 30 0.04...0.12 bzx55c43 43 40...46 2.5 90 500 0.5 0.1 5 33 0.04...0.12 bzx55c47 47 44...50 2.5 110 600 0.5 0.1 5 36 0.04...0.12 bzx55c51 51 48...54 2.5 125 700 0.5 0.1 10 39 0.04...0.12 bzx55c56 56 52...60 2.5 135 700 0.5 0.1 10 43 0.04...0.12 bzx55c62 62 58...66 2.5 150 1000 0.5 0.1 10 47 0.04...0.12 bzx55c68 68 64...72 2.5 200 1000 0.5 0.1 10 51 0.04...0.12 bzx55c75 75 70...79 2.5 250 1000 0.5 0.1 10 56 0.04...0.12 BZX55C82 82 77?87 2.5 300 1500 0.25 0.1 10 62 0.05?0.12 1) tested with pulses t p = 20 ms. 2) the bzx55c0v8 is a silicon diode with operation in forward dire ction. hence, the index of all parameters should be "f" instead of "z". connect the cathode lead to the negative pole. bzx55c silicon planar zener diodes 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech bzx55c silicon planar zener diodes 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification semtech |
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